Prices BSM50GX120DN2 Infineon United States

BRAND	Infineon
Product	BSM50GX120DN2
Description	IGBT Modules
Internal code	ONR4356305
Technical specification	Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 78 A Gate-Emitter Leakage Current: 200 nA Pd - Power Dissipation: 400 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C

Infineon - BSM50GX120DN2 referenced IGBT Modules product produced by high technology.
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