Prices FF200R12KT4 Infineon United States

BRAND	Infineon
Product	FF200R12KT4
Description	IGBT Module
Internal code	ONR4751131
Technical specification	Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 320 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 1100 W

Infineon - FF200R12KT4 referenced IGBT Module product produced by high technology.
FF200R12KT4 became irreplaceable of foundations. All of the listed products are with guaranteed origin and high quality. It produced result of tests of laborotory for years. We present you the most competative price and delivery time on FF200R12KT4 referenced product.

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