Prices FF200R12KS4 Infineon United States

BRAND	Infineon
Product	FF200R12KS4
Description	IGBT Module
Internal code	ONR3393393
Weight	1
Technical specification	Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 3.2 V Continuous Collector Current at 25 C: 275 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 1400 W

Infineon - FF200R12KS4 referenced IGBT Module product produced by high technology.
FF200R12KS4 became irreplaceable of foundations. FF200R12KS4 referenced product which is satisfy the customer's needs, offers advantages of quality and cost. It produced result of tests of laborotory for years. Make an offer to us for FF200R12KS4 please contact us.

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